Grützmacher, D : rechercher sur Z-Library

Le plus grand référentiel d'articles scientifiques au monde. 70,000,000+ d'articles gratuitement.

Don't use scam websites

Livres
Articles (64)
Les plus populaires
Liste
- Liste
- Tableau

1

Photoluminescence study of interdiffusion in In0.53Ga0.47As/InP surface quantum wells

Oshinowo, J., Forchel, A., Grützmacher, D., Stollenwerk, M., Heuken, M., Heime, K.

Journal:

Applied Physics Letters

Année:

1992

Langue:

english

Fichier:

PDF, 560 KB

english, 1992

2

[AIP Proceedings of the 12th International conference on spectral line shapes - Toronto, Canada (13−17 Jun 1994)] AIP Conference Proceedings - Fine-structure asymmetry of Doppler-free Stark-broadened two-photon polarization line profiles of hydrogen Lyman-α

Seidel, J., Steiger, A., Grützmacher, K.

Année:

1995

Langue:

english

Fichier:

PDF, 126 KB

english, 1995

3

Rhodium(0) Metalloradicals in Binuclear C−H Activation

Puschmann, Florian F., Grützmacher, Hansjörg, Bruin, Bas de

Journal:

Journal of the American Chemical Society

Année:

2010

Langue:

english

Fichier:

PDF, 709 KB

english, 2010

4

Electronic Phase Coherence in InAs Nanowires

Blömers, Ch., Lepsa, M. I., Luysberg, M., Grützmacher, D., Lüth, H., Schäpers, Th.

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 2.79 MB

english, 2011

5

Electronic structure, surface morphology, and topologically protected surface states of Sb2Te3 thin films grown on Si(111)

Plucinski, L., Herdt, A., Fahrendorf, S., Bihlmayer, G., Mussler, G., Döring, S., Kampmeier, J., Matthes, F., Bürgler, D. E., Grützmacher, D., Blügel, S., Schneider, C. M.

Journal:

Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 2.58 MB

english, 2013

6

Hall effect measurements on InAs nanowires

Blömers, Ch., Grap, T., Lepsa, M. I., Moers, J., Trellenkamp, St., Grützmacher, D., Lüth, H., Schäpers, Th.

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 1.13 MB

english, 2012

7

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Wirths, S., Tiedemann, A. T., Ikonic, Z., Harrison, P., Holländer, B., Stoica, T., Mussler, G., Myronov, M., Hartmann, J. M., Grützmacher, D., Buca, D., Mantl, S.

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 1.96 MB

english, 2013

8

Tensely strained GeSn alloys as optical gain media

Wirths, S., Ikonic, Z., Tiedemann, A. T., Holländer, B., Stoica, T., Mussler, G., Breuer, U., Hartmann, J. M., Benedetti, A., Chiussi, S., Grützmacher, D., Mantl, S., Buca, D.

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 2.46 MB

english, 2013

9

SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio

Tsujino, S., Usami, N., Weber, A., Mussler, G., Shushunova, V., Grützmacher, D., Azuma, Y., Nakajima, K.

Journal:

Applied Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 580 KB

english, 2007

10

Manipulating InAs nanowires with submicrometer precision

Flöhr, Kilian, Liebmann, Marcus, Sladek, Kamil, Günel, H. Yusuf, Frielinghaus, Robert, Haas, Fabian, Meyer, Carola, Hardtdegen, Hilde, Schäpers, Thomas, Grützmacher, Detlev, Morgenstern, Markus

Journal:

Review of Scientific Instruments

Année:

2011

Langue:

english

Fichier:

PDF, 849 KB

english, 2011

11

Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

O. B. Agafonov, C. Dais, D. Grützmacher, R. J. Haug

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 605 KB

english, 2010

12

Microcystin Elimination During Sediment Contact

Grützmacher, Gesche, Wessel, Gabriele, Klitzke, Sondra, Chorus, Ingrid

Journal:

Environmental Science & Technology

Année:

2010

Langue:

english

Fichier:

PDF, 148 KB

english, 2010

13

In situ scanning tunneling microscopy study of C-induced Ge quantum dot formation on Si(100)

Leifeld, O., Müller, E., Grützmacher, D., Müller, B., Kern, K.

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 668 KB

english, 1999

14

Raman spectroscopy of carbon-induced germanium dots

C. Guedj, A. Beyer, E. Müller, D. Grützmacher

Année:

2001

Langue:

english

Fichier:

PDF, 292 KB

english, 2001

15

Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy

Glade, M., Grützmacher, D., Meyer, R., Woelk, E. G., Balk, P.

Journal:

Applied Physics Letters

Année:

1989

Langue:

english

Fichier:

PDF, 499 KB

english, 1989

16

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

Limbach, F., Gotschke, T., Stoica, T., Calarco, R., Sutter, E., Ciston, J., Cusco, R., Artus, L., Kremling, S., Höfling, S., Worschech, L., Grützmacher, D.

Journal:

Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 1.40 MB

english, 2011

17

Freestanding SiGe/Si/Cr and SiGe/Si/Si[sub x]N[sub y]/Cr microtubes

Golod, S. V., Prinz, V. Ya., Wägli, P., Zhang, L., Kirfel, O., Deckhardt, E., Glaus, F., David, C., Grützmacher, D.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 510 KB

english, 2004

18

Magnetotransport in narrow In0.53Ga0.47As/InP wires

Menschig, A., Forchel, A., Roos, B., Germann, R., Pressel, K., Heuring, W., Grützmacher, D.

Journal:

Applied Physics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 571 KB

english, 1990

19

Anticrossing between heavy-hole states in Si[sub 0.2]Ge[sub 0.8]/Si-coupled quantum wells grown on Si[sub 0.5]Ge[sub 0.5] pseudosubstrate

Diehl, L., Borak, A., Mentese, S., Grützmacher, D., Sigg, H., Gennser, U., Sagnes, I., Campidelli, Y., Kermarrec, O., Bensahel, D., Faist, J.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 316 KB

english, 2004

20

Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition

Zaslavsky, A., Grützmacher, D. A., Lee, Y. H., Ziegler, W., Sedgwick, T. O.

Journal:

Applied Physics Letters

Année:

1992

Langue:

english

Fichier:

PDF, 699 KB

english, 1992

21

Hall mobility of narrow Si[sub 0.2]Ge[sub 0.8]–Si quantum wells on Si[sub 0.5]Ge[sub 0.5] relaxed buffer substrates

Tsujino, S., Falub, C. V., Müller, E., Scheinert, M., Diehl, L., Gennser, U., Fromherz, T., Borak, A., Sigg, H., Grützmacher, D., Campidelli, Y., Kermarrec, O., Bensahel, D.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 613 KB

english, 2004

22

Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

Rauter, P., Fromherz, T., Bauer, G., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., Diehl, L., Dehlinger, G., Grützmacher, D.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 595 KB

english, 2006

23

Impact of template variations on shape and arrangement of Si∕Ge quantum dot arrays

Dais, C., Solak, H. H., Müller, E., Grützmacher, D.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 536 KB

english, 2008

24

Intersubband absorption performed on p-type modulation-doped Si[sub 0.2]Ge[sub 0.8]/Si quantum wells grown on Si[sub 0.5]Ge[sub 0.5] pseudosubstrate

Diehl, L., Sigg, H., Dehlinger, G., Grützmacher, D., Müller, E., Gennser, U., Sagnes, I., Fromherz, T., Campidelli, Y., Kermarrec, O., Bensahel, D., Faist, J.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 404 KB

english, 2002

25

Fabrication of three-terminal resonant tunneling devices in silicon-based material

Zaslavsky, A., Milkove, K. R., Lee, Y. H., Chan, K. K., Stern, F., Grützmacher, D. A., Rishton, S. A., Stanis, C., Sedgwick, T. O.

Journal:

Applied Physics Letters

Année:

1994

Langue:

english

Fichier:

PDF, 672 KB

english, 1994

26

Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕AlInAs quantum-cascade structures

Tsujino, S., Borak, A., Müller, E., Scheinert, M., Falub, C. V., Sigg, H., Grützmacher, D., Giovannini, M., Faist, J.

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 513 KB

english, 2005

27

Subpicosecond electron-hole recombination time and terahertz-bandwidth photoresponse in freestanding GaAs epitaxial mesoscopic structures

Mikulics, Martin, Zhang, Jie, Serafini, John, Adam, Roman, Grützmacher, Detlev, Sobolewski, Roman

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 682 KB

english, 2012

28

Size control of carbon-induced Ge quantum dots

Beyer, A., Müller, E., Sigg, H., Stutz, S., Grützmacher, D., Leifeld, O., Ensslin, K.

Journal:

Applied Physics Letters

Année:

2000

Langue:

english

Fichier:

PDF, 315 KB

english, 2000

29

Voltage-tunable, two-band mid-infrared detection based on Si/SiGe quantum-cascade injector structures

Rauter, P., Fromherz, T., Bauer, G., Diehl, L., Dehlinger, G., Sigg, H., Grützmacher, D., Schneider, H.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 417 KB

english, 2003

30

Interface roughness in SiGe quantum-cascade structures from x-ray reflectivity studies

Roch, T., Medun̆a, M., Stangl, J., Hesse, A., Lechner, R. T., Bauer, G., Dehlinger, G., Diehl, L., Gennser, U., Müller, E., Grützmacher, D.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 722 KB

english, 2002

31

Electroluminescence from strain-compensated Si[sub 0.2]Ge[sub 0.8]/Si quantum-cascade structures based on a bound-to-continuum transition

L. Diehl, S. Menteşe, E. Müller, D. Grützmacher, H. Sigg, U. Gennser, I. Sagnes, Y. Campidelli, O. Kermarrec, D. Bensahel, J. Faist

Année:

2002

Langue:

english

Fichier:

PDF, 567 KB

english, 2002

32

Axial strain in GaAs/InAs core-shell nanowires

Biermanns, Andreas, Rieger, Torsten, Bussone, Genziana, Pietsch, Ullrich, Grützmacher, Detlev, Ion Lepsa, Mihail

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 956 KB

english, 2013

33

Traffic Noise Problems in Germany

Grützmacher, Martin

Journal:

Année:

1959

Langue:

english

Fichier:

PDF, 2.03 MB

english, 1959

34

Band gap and band alignment of strain reduced Si/Si[sub 1−x−y]Ge[sub x]C[sub y] multiple quantum well structures obtained by photoluminescence measurements

Hartmann, R., Gennser, U., Sigg, H., Grützmacher, D., Ensslin, K.

Journal:

Applied Physics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 340 KB

english, 1998

35

Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

P. Rauter, G. Mussler, D. Grützmacher, T. Fromherz

Année:

2011

Langue:

english

Fichier:

PDF, 389 KB

english, 2011

36

Domain formation due to surface steps in topological insulator Bi2Te3 thin films grown on Si (111) by molecular beam epitaxy

Borisova, S., Kampmeier, J., Luysberg, M., Mussler, G., Grützmacher, D.

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 1.69 MB

english, 2013

37

Single-hole transistor in a p-Si/SiGe quantum well

Dötsch, U., Gennser, U., David, C., Dehlinger, G., Grützmacher, D., Heinzel, T., Lüscher, S., Ensslin, K.

Journal:

Applied Physics Letters

Année:

2001

Langue:

english

Fichier:

PDF, 450 KB

english, 2001

38

Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere

Grützmacher, D. A., Sedgwick, T. O., Powell, A., Tejwani, M., Iyer, S. S., Cotte, J., Cardone, F.

Journal:

Applied Physics Letters

Année:

1993

Langue:

english

Fichier:

PDF, 659 KB

english, 1993

39

Phase coherent transport in InSb nanowires

Yao, Huijun, Yusuf Günel, Hacı, Blömers, Christian, Weis, Karl, Chi, Junhong, Grace Lu, Jia, Liu, Jie, Grützmacher, Detlev, Schäpers, Thomas

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 720 KB

english, 2012

40

Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires

Maile, B. E., Forchel, A., Germann, R., Grützmacher, D.

Journal:

Applied Physics Letters

Année:

1989

Langue:

english

Fichier:

PDF, 555 KB

english, 1989

41

Optical properties of very narrow GaInAs/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy

Grützmacher, D., Wolter, K., Jürgensen, H., Balk, P., Bulle Lieuwma, C. W. T.

Journal:

Applied Physics Letters

Année:

1988

Langue:

english

Fichier:

PDF, 437 KB

english, 1988

42

Properties of the two-dimensional electron gas in modulation-doped GaInAs(P)/InP structures grown by low-pressure metalorganic vapor-phase epitaxy

Grützmacher, D., Meyer, R., Balk, P., Berg, C., Schäpers, T., Lüth, H., Zachau, M., Koch, F.

Journal:

Journal of Applied Physics

Année:

1989

Langue:

english

Fichier:

PDF, 1.03 MB

english, 1989

43

InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN

Mikulics, M., Stoklas, R., Dadgar, A., Gregušová, D., Novák, J., Grützmacher, D., Krost, A., Kordoš, P.

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 392 KB

english, 2010

44

Very narrow SiGe/Si quantum wells deposited by low-temperature atmospheric pressure chemical vapor deposition

Grützmacher, D. A.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

1993

Langue:

english

Fichier:

PDF, 1.16 MB

english, 1993

45

Evolution and stability of ordered SiGe islands grown on patterned Si(100) substrates

Dais, C., Mussler, G., Sigg, H., Müller, E., Solak, H. H., Grützmacher, D.

Journal:

Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 645 KB

english, 2009

46

Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures

Fidorra, F., Harde, P., Venghaus, H., Grützmacher, D.

Journal:

Applied Physics Letters

Année:

1989

Langue:

english

Fichier:

PDF, 551 KB

english, 1989

47

SiGe quantum well infrared photodetectors on pseudosubstrate

Rauter, P., Fromherz, T., Falub, C., Grützmacher, D., Bauer, G.

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 655 KB

english, 2009

48

Electron-hole transition energies and atomic steps at the interfaces of thin InGaAs/InP quantum wells

Zachau, M., Grützmacher, D.

Journal:

Applied Physics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 535 KB

english, 1990

49

Supercurrent in Nb/InAs-nanowire/Nb Josephson junctions

Günel, H. Y., Batov, I. E., Hardtdegen, H., Sladek, K., Winden, A., Weis, K., Panaitov, G., Grützmacher, D., Schäpers, Th.

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2012

50

Three-dimensional phononic nanocrystal composed of ordered quantum dots

Wen, Yu-Chieh, Sun, Jia-Hong, Dais, Christian, Grützmacher, Detlev, Wu, Tsung-Tsong, Shi, Jin-Wei, Sun, Chi-Kuang

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 498 KB

english, 2010